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| PD - 50064A GA50TS120U "HALF-BRIDGE" IGBT INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 50A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 50 100 100 100 20 2500 280 145 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.44 0.70 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA50TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Min. Typ. Max. Units Conditions 1200 -- -- VGE = 0V, I C = 1mA -- 2.4 3.0 VGE = 15V, IC = 50A -- 2.2 -- V VGE = 15V, IC = 50A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 500A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 500A Forward Transconductance -- 72 -- S VCE = 25V, I C = 50A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- 10 VGE = 0V, VCE = 1200V, TJ = 125C Diode Forward Voltage - Maximum -- 2.9 4.1 V IF = 50A, VGE = 0V -- 2.7 -- IF = 50A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 397 67 132 74 82 313 327 6.0 10 16 8933 397 77 141 66 4616 999 Max. Units Conditions 596 VCC = 400V 100 nC IC = 60A 197 TJ = 25C -- RG1 = 15, RG2 = 0, -- ns IC = 50A -- VCC = 720V -- VGE = 15V -- mJ Inductor load -- 24 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 50A -- A RG1 = 15 -- nC RG2 = 0 -- A/s VCC = 720V di/dt = 1200A/s 2 www.irf.com GA50TS120U 60 For both: 50 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 65 W S q u a re w a v e : 40 30 60 % of ra ted vo ltag e I 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 1000 I C , Collector Current (A) TJ = 125 C TJ = 25 C I C , Collector-to-Emitter Current (A) 100 TJ = 125 C TJ = 25 C 10 10 1.5 V = 15V 80s PULSE WIDTH GE 2.0 2.5 3.0 1 4.0 V = 25V 80s PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA50TS120U 60 4.0 50 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 40 3.0 IC = 100 A IC = 50 A 30 20 2.0 IC = 25 A 10 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T herm al R es pons e (Zth JC ) D = 0 .50 0 .20 0.1 0 .10 0 .05 0.02 0.01 S IN G LE PU L SE (T HE R M AL RE S PO N SE ) P DM t 1 t2 Notes: 1. Duty factor D = t 1 /t 2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 10 0.001 0.01 0.1 1 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA50TS120U 20000 16000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 50A 16 C, Capacitance (pF) 12000 Cies 12 8000 C oes 4000 8 C res 4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 24 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 720V V GE = 15V TJ = 125 C 22 I C = 50A 100 RG1=15;R G2 = 0 G = Ohm VGE = 15V VCC = 720V IC = 100 A IC = 50 A IC = 25 A 20 10 18 16 14 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm)) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA50TS120U 40 Total Switching Losses (mJ) 30 I C , Collector Current (A) 40 60 80 100 120 VCC = 720V VGE = 15V RG1=15;RG2 = 0 RG = Ohm T J = 150 TC = 125C C 140 VGE = 20V T J = 125 oC 120 VCE measured at terminal(Peak Voltage) 100 80 60 20 10 40 20 0 0 20 SAFE OPERATING AREA 0 0 200 400 600 800 1000 1200 1400 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Reverse Bias SOA 10000 TJ = 125C Instantaneous Forward Current - IF ( A ) TJ = 25C 8000 VR = 72 0 V TJ = 12 5 C TJ = 25 C I F = 1 00 A I F = 5 0A I F = 25 A QRR - ( nC) 10 1.0 2.0 3.0 4.0 6000 4000 2000 0 500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V FM (V ) di f /dt - (A /s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA50TS120U 240 120 VR = 7 2 0V TJ = 1 25 C TJ = 2 5C 200 VR = 7 2 0V TJ = 1 25 C TJ = 2 5C I F = 10 0A I F = 5 0A I F = 25 A 100 I F = 1 00 A I F = 50 A I F = 2 5A trr - ( ns ) 120 IRRM - ( A ) 1000 1500 2000 160 80 60 80 40 40 500 20 500 1000 1500 2000 di f /dt - (A /s) di f /dt - (A /s) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA50TS120U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = Vce Ic dt t1 + 5 S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIc t dt Vd d t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA50TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 600V 600V 4 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA50TS120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50s; single shot. Case Outline -- INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com |
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